Improved Planar MOS Barrier Schottky (PMBS) Rectifier with High-k Dielectrics
| Autor: | Qing Wen Song, Yi Men Zhang, Yuan Hao, Xiaoyan Tang, Yuming Zhang, Yu Hu Wang |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Electrical engineering Schottky diode Dielectric engineering.material Condensed Matter Physics Rectifier Polycrystalline silicon Mechanics of Materials Plasma-enhanced chemical vapor deposition Electric field engineering Breakdown voltage Optoelectronics General Materials Science business High-κ dielectric |
| Zdroj: | Materials Science Forum. :906-909 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.821-823.906 |
| Popis: | In this paper, an improved planar MOS barrier Schottky (PMBS) rectifier is proposed which utilizes the PECVD deposited high-k semi-insulating polycrystalline silicon (SIPOS) as the MOS area gate dielectrics for the first time. By adopting the high-k SIPOS as the MOS gate dielectrics, the peak electric field at the interface betwwen dielectrics layer and SiC can be significantly relieved and the device reliability can obviously enhanced without considerable degradation of on-state characteristics. With the optimized the thickness of the SIPOS film, the breakdown voltage (BV) of 1500V for the fabricated device was achieved, which is approximately corresponds to 85% of the theoretical parallel plane breakdown voltage value calculated from the used epilayer structure. And the specific on-state resistance (RSP-ON) is about 4.2mΩ•cm2. The corresponding figure-of-merit of VB2/ RSP-ON for the proposed device is 535.7MW/cm2. |
| Databáze: | OpenAIRE |
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