Compact Model of the Entire I-V Characteristic for Accurate Description of the Asymmetric Degradation of pMOSFETs during Off-State Stress

Autor:	Dimitri Linten, Jacopo Franco, Philippe Roussel, Brecht Truijen
Rok vydání:	2019
Předmět:	Physics Stress (mechanics) Model description Reliability (semiconductor) Distortion State (functional analysis) Topology Hot carrier stress PMOS logic Degradation (telecommunications)
Zdroj:	2019 IEEE International Integrated Reliability Workshop (IIRW).
Popis:	We propose a compact model description of the entire I d -V g characteristic, based on the EKV model, and extended to capture the complex I d -V g distortion induced by asymmetric hot carrier degradation. In particular, we apply the methodology to model the degradation of pMOS devices during off-state hot carrier stress, which is a reliability concern relevant for memory periphery applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0b5d5dfe0773692f43894f098a610c43 https://doi.org/10.1109/iirw47491.2019.8989890 Zobrazit plný text záznamu