Optimization of 150 mm 4H SiC Substrate Crystal Quality
| Autor: | Ouloide Yannick Goue, Balaji Raghothamachar, Michael Dudley, Ian Manning, Jianqiu Guo, Yu Yang, Gil Yong Chung, Edward Sanchez |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Stress reduction Materials science business.industry Mechanical Engineering Bulk crystal growth 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Crystal Quality (physics) Mechanics of Materials Sic substrate Power electronics 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business Wafer bow |
| Zdroj: | Materials Science Forum. 924:11-14 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.11 |
| Popis: | Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature. |
| Databáze: | OpenAIRE |
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