Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

Autor:	Ralf Heiderhoff, Ludwig Josef Balk, H.-J. Schulze, R. Siemieniec, C. Geissler, A. Pugatschow, F.-J. Niedernostheide
Rok vydání:	2008
Předmět:	Materials science Ion beam business.industry Microscopy Cathode ray Optoelectronics Power semiconductor device Power MOSFET Electrostatic induction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect business Diode Power (physics)
Zdroj:	9th International Seminar on Power Semiconductors (ISPS 2008).
Popis:	The development of appropriate edge termination structures is a challenging task for all kinds of different vertical power semiconductors such as high-voltage diodes, IGBTs or especially compensation devices. Ion-beam induced charge microscopy and electron-beam induced charge microscopy are reliable tools for imaging of space-charge regions and detection of electric-field enhancements inside of power devices. The usefulness of these methods is shown for the example of high-voltage power diodes and low-voltage power MOSFET. Advantages and limitations of the measurement techniques are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0b518a17a3ceefca11e8932c44703a47 https://doi.org/10.1049/ic:20080194 Zobrazit plný text záznamu