Freestanding graphene writing on a silicon carbide wafer
| Autor: | Sehwan Park, S.H. Woo, H.W. Kim, Dongchul Sung, Byoung-Nam Kim, Eung-Kwon Kim, J.R. Ahn, I.B. Khadk, Geun Young Yeom, J. Son, D.-H. Lee, Jihoon Park |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Semiconductor device fabrication General Physics and Astronomy 02 engineering and technology Chemical vapor deposition 01 natural sciences law.invention symbols.namesake chemistry.chemical_compound law 0103 physical sciences Silicon carbide General Materials Science Wafer 010302 applied physics business.industry Atomic force microscopy Graphene 021001 nanoscience & nanotechnology chemistry Trench symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Current Applied Physics. 20:1435-1440 |
| ISSN: | 1567-1739 |
| DOI: | 10.1016/j.cap.2020.09.010 |
| Popis: | Freestanding graphene on a trench has been fabricated extensively using a transfer process of chemical vapor deposition grown graphene. Here, we demonstrate that freestanding graphene can be grown directly on a trench without a transfer process. A shallow trench was made on a 6H–SiC(0001) wafer using a focused ion beam lithography. The shallow trench was heated to a high temperature under Ar atmosphere. The heat treatment made the shallow trench become deeper and wider. Subsequently, epitaxial graphene was floating on the trench, resulting in freestanding graphene, where underlying bulk SiC was self-etched after the growth of epitaxial graphene. The freestanding graphene on a trench was characterized using Raman spectroscopy and atomic force microscopy. Such freestanding graphene writing can be applied to semiconductor fabrication process of freestanding graphene devices without a transfer process. |
| Databáze: | OpenAIRE |
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