Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model
| Autor: | Kevin J. Malloy, H. Li, T.C. Newell, L E Lester, G.T. Liu, Andreas Stintz, P G Eliseev |
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| Rok vydání: | 2000 |
| Předmět: |
Nanostructure
Materials science business.industry Physics::Optics Statistical and Nonlinear Physics Atmospheric temperature range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor laser theory law.invention Condensed Matter::Materials Science Quantum dot law Optoelectronics Electrical and Electronic Engineering business Molecular beam epitaxy Diode |
| Zdroj: | Quantum Electronics. 30:664-668 |
| ISSN: | 1468-4799 1063-7818 |
| Popis: | The dependence of the mode optical gain on current in InAs/InGaAs quantum-dot structures grown by the method of molecular-beam epitaxy is obtained from the experimental study of ultra-low-threshold laser diodes. The record lowest inversion threshold at room temperature was about 13 A cm-2. A theoretical model is proposed that relates the optical gain to the ground-state transitions in quantum dots. The effective gain cross section is estimated to be ~7 × 10-15 cm-2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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