Tellurium induced lattice dilation in OMVPE grown InP

Autor:	K. T. Chan, V. M. Robbins, F. G. Kellert, J. E. Turner
Rok vydání:	1990
Předmět:	Solid-state physics Dopant Chemistry Doping Inorganic chemistry Vapor phase Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Lattice constant Lattice (order) Materials Chemistry Electrical and Electronic Engineering Tellurium
Zdroj:	Journal of Electronic Materials. 19:1425-1428
ISSN:	1543-186X 0361-5235
DOI:	10.1007/bf02662833
Popis:	For organometallic vapor phase epitaxial (OMVPE) grown InP, the change in lattice constant is measured as a function of tellurium (Te) dopant concentration. We observe ~0.15% dilation in the InP lattice constant at a Te concentration of ~1020 cm-3. Our measurements are compared to predictions from Vegard’s Law.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0b29ff20b614fd7b597bedff6697e073 https://doi.org/10.1007/bf02662833 Zobrazit plný text záznamu Full text from SpringerLink