The influence of melt purification and structure defects on mid-infrared light emitting diodes
| Autor: | Anthony Krier, Victor V. Sherstnev |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Absorption spectroscopy business.industry Infrared Analytical chemistry Quantum yield Condensed Matter Physics Epitaxy Residual carrier Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Solvent Getter law Optoelectronics business Light-emitting diode |
| Zdroj: | Journal of Physics D: Applied Physics. 36:1484-1488 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/36/13/309 |
| Popis: | Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH4 absorption spectrum and potentially could form the basis of a practical infrared CH4 gas sensor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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