Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications
| Autor: | Chih-Ming Lin, Ingram Yin-Ku Chang, Pi-Chun Juan, Wen-Chieh Shih, Joseph Ya-min Lee |
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| Rok vydání: | 2009 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Physics and Astronomy (miscellaneous) business.industry Transistor Insulator (electricity) Hardware_PERFORMANCEANDRELIABILITY law.invention Non-volatile memory Capacitor Semiconductor Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor business MISFET Hardware_LOGICDESIGN Voltage |
| Zdroj: | Applied Physics Letters. 94:142905 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.3114403 |
| Popis: | Metal-ferroelectric-insulator-semiconductor capacitors and field effect transistors with Al/BiFeO3/Y2O3/Si structure were fabricated and characterized for nonvolatile memory applications. The capacitance-voltage curves exhibit a maximum clockwise memory window of 0.92 V. The minimum leakage current density is 2×10−7 A/cm2 at an applied voltage of 5 V. The capacitance-voltage memory window as a function of the sweep voltage range was investigated. The IDS-VGS curves of metal-ferroelectric-insulator-semiconductor transistors show a maximum memory window of 0.84 V. The drain current on/off ratio maintained more than three orders of magnitude after an elapsed time of 104 s. |
| Databáze: | OpenAIRE |
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