Recristallisation de TiO2, GeO2, Si1−GeO2 en solutions hydrothermales fluorées

Autor:	Y Toudic, M. Passaret, R Aumont, A Regreny, J.F Bayon
Rok vydání:	1972
Předmět:	Materials science Inorganic chemistry Oxide chemistry.chemical_element Germanium Condensed Matter Physics Alkali metal law.invention Inorganic Chemistry chemistry.chemical_compound chemistry law Rutile Materials Chemistry Crystallization Fluoride Seed crystal Titanium
Zdroj:	Journal of Crystal Growth. :524-529
ISSN:	0022-0248
DOI:	10.1016/0022-0248(72)90292-8
Popis:	The crystallisation of titanium, germanium, and silicon oxides in KF, CsF, and RbF solutions was studied at 300–600°C and 500–1500atm. Crystallisation of mixed Si1−xGexO2 crystals, with Ge atomic concentration up to 5%, is described. The spontaneous crystallisation of rutile, quartz and mixed Si1−xGexO2 crystals and their growth on seed crystals was studied. The optimum concentration of solvent for growth of a particular oxide in the range 0.5–5 M alkali fluoride differs with the alkali. When the temperature is higher, germanates or fluorides are obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0b183a0ff5bcc77279aef716c5c013ac https://doi.org/10.1016/0022-0248(72)90292-8 Zobrazit plný text záznamu