Nonlinear RF Characterization and Modeling of Heterojunction Bipolar Transistors Under Pulsed Conditions

Autor:	Didier Floriot, J.P. Viaud, Raphaël Sommet, Raymond Quéré, Jean-Pierre Teyssier
Rok vydání:	1994
Předmět:	Materials science business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Bipolar junction transistor Transistor Heterojunction Gallium arsenide law.invention chemistry.chemical_compound chemistry law Optoelectronics Breakdown voltage Radio frequency business
Zdroj:	24th European Microwave Conference, 1994.
Popis:	I(V) and S-parameters pulsed measurments have been performed on a heterojunction bipolar transistor for currents up to 105 Amps/cm2. S-parameters data have been acquired in the whole device output domain. So, a nonlinear DC to RF consistent model has been obtained with I(V) and RF pulsed measurements on a GaInP/GaAs HBT transistor, processed by the central research laboratory of Thomson CSF.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0b104a50d75243a1cb79f1b410178d9e https://doi.org/10.1109/euma.1994.337448 Zobrazit plný text záznamu