InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
| Autor: | Lianshan Wang, Nikolai Yakovlev, Keyan Zang, Soo Jin Chua, Sukant K. Tripathy, Osipowicz Thomas, Hailong Zhou |
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| Rok vydání: | 2007 |
| Předmět: |
Photoluminescence
Materials science business.industry Gallium nitride Chemical vapor deposition Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound chemistry Etching (microfabrication) Materials Chemistry Sapphire Optoelectronics Metalorganic vapour phase epitaxy business Quantum well |
| Zdroj: | Journal of Crystal Growth. 298:511-514 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2006.10.067 |
| Popis: | Epitaxial lateral overgrowth of gallium nitride with ( 1 1 2 ¯ 2 ) facets was realized by metal organic chemical vapor deposition on GaN/sapphire (0 0 0 1) substrates with SiO2 stripe mask. After wet etching of the mask, periodic multiple quantum wells (MQWs) InGaN/GaN structures were grown on the whole surface. Cross-sectional transmission electron microscopy (TEM) showed that a higher growth rate on (0 0 0 1) plane compared to ( 1 1 2 ¯ 2 ) facet. The well thickness and In composition of the quantum wells (QWs) were analyzed by the cross-sectional and high resolution X-ray diffraction (HR-XRD) measurements. Micro photoluminescence spectra confirmed that the ELO InGaN/GaN MQWs structures on the ( 1 1 2 ¯ 2 ) plane provide nearly multi-wavelengths output light. This is suitable for display devices based on the white color optical system. |
| Databáze: | OpenAIRE |
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