Microstructure Development and Its Effects on the Electrical Properties in Epitaxially Grown In-Situ Boron and Carbon (co)-doped Highly Strained High Percentage Silicon-Germanium Layers

Autor:	Alexander Reznicek, Thomas N. Adam, Jinghong Li, Zhengmao Zhu, Harold Hovel, Joel De Souza, Stephen W. Bedell, Vamsi Paruchuri, Devendra Sadana
Rok vydání:	2012
Zdroj:	ECS Meeting Abstracts. :3234-3234
ISSN:	2151-2043
DOI:	10.1149/ma2012-02/43/3234
Popis:	not Available.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0b07b1f4569239ca7ad2d24ba66c485b https://doi.org/10.1149/ma2012-02/43/3234 Zobrazit plný text záznamu