Preparation and characterization of RuO2 thin films from Ru(CO)2(tmhd)2 by metalorganic chemical vapor deposition
| Autor: | Yun Chi, Yao-Lun Chen, Ying-Sheng Huang, Reui-San Chen |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Scanning electron microscope
Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ruthenium symbols.namesake chemistry X-ray crystallography Materials Chemistry symbols Metalorganic vapour phase epitaxy Thin film Raman spectroscopy Raman scattering |
| Zdroj: | Thin Solid Films. 413:85-91 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(02)00343-7 |
| Popis: | A new metalorganic ruthenium compound which contained two β-diketonate and two CO ligands arranged in cis-disposition was used in preparation of high quality ruthenium dioxide (RuO2) thin films by cold-wall metalorganic chemical vapor deposition. A detailed characterization of the films including scanning electron microscopy (SEM), electrical resistivity, Raman scattering and X-ray diffraction measurements were carried out. The surface morphology of the films was investigated by SEM, from which a columnar growth pattern was observed using a cross-sectional scanning electron micrograph analysis. The resistivity measurement shows a metallic conducting characteristic, while Raman study indicates the formation of a high quality, nearly stress-free RuO2 film. In addition, changes of structural and electrical properties after thermal annealing are discussed. |
| Databáze: | OpenAIRE |
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