A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors
| Autor: | Z. Li, E. M. Verbitskaya, V. K. Eremin, U. Biggeri, S. Pirollo, Silvio Sciortino, Claude Leroy, David Menichelli, E. Borchi, Mara Bruzzi |
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| Rok vydání: | 1998 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon business.industry Analytical chemistry chemistry.chemical_element Schottky diode Crystallographic defect Gallium arsenide Semiconductor detector chemistry.chemical_compound Nuclear Energy and Engineering chemistry Optoelectronics Neutron Irradiation Electrical and Electronic Engineering business Saturation (magnetic) |
| Zdroj: | IEEE Transactions on Nuclear Science. 45:597-601 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.682455 |
| Popis: | Silicon p/sup +/n junctions irradiated with neutron and proton fluences in the range 5/spl times/10/sup 11/ 4/spl times/10/sup 15/ cm/sup -2/ and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N, of the main radiation-induced deep traps (Et/spl ap/0.4/spl divide/0.53 eV) is found to increase as N, /spl alpha/ f/sup 3/2/ achieving values up to 5/spl times/10/sup 15/ cm/sup -3/ and a mobility saturation at 100 cm/sup 2//Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested. |
| Databáze: | OpenAIRE |
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