Effect of strong magnetic fields on current-voltage characteristics of InAs/GaSb/InAs tunneling devices
| Autor: | N. Miura, Tadashi Takamasu, Kenji Funato, Hiroji Kawai, Kenichi Taira |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Physics
Condensed matter physics Critical voltage Heterojunction Landau quantization Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Magnetic field Negative differential conductivity Condensed Matter::Materials Science Paramagnetism Current voltage Electrical and Electronic Engineering Quantum tunnelling |
| Zdroj: | Physica B: Condensed Matter. 201:380-383 |
| ISSN: | 0921-4526 |
| Popis: | Measurements of current-voltage characteristics of GaSb/InAs heterostructure devices were performed under pulsed high magnetic fields up to 40 T. The critical voltage for the negative differential conductivity was found to change under strong magnetic fields applied parallel to the interface. The dependence of critical voltage on the magnetic field was investigated in terms of self-consistently calculated Landau levels. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|