Dislocation Conversion in 4H-SiC Crystals Grown by Metastable Solvent Epitaxy

Autor:	Toru Matsunami, Nobuhiko Nakamura, Yoshitaka Setoguchi, Hirofumi Aoki, Hisashi Yoshioka, Hiroshi Kawami, Shinkichi Hamada, Noboru Ohtani, Koichi Nishikawa, Toshiyuki Isshiki, Satoshi Yamaguchi
Rok vydání:	2013
Předmět:	Solvent Crystallography Materials science Metastability Dislocation Epitaxy Electronic Optical and Magnetic Materials
Zdroj:	ECS Journal of Solid State Science and Technology. 2:N3092-N3097
ISSN:	2162-8777 2162-8769
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0aeb12da9903dbfe0c18fdc2c488fe7b https://doi.org/10.1149/2.018308jss Zobrazit plný text záznamu