Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process

Autor:	Robert Tsu, Joe W. McPherson, William R. McKee
Rok vydání:	2002
Předmět:	Permittivity Materials science Moisture absorption Dielectric strength Parasitic capacitance business.industry Analytical chemistry Copper interconnect Optoelectronics Time-dependent gate oxide breakdown Dielectric business Leakage (electronics)
Zdroj:	2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
DOI:	10.1109/relphy.2000.843938
Popis:	Leakage and breakdown characteristics of low-k dielectrics are becoming increasingly important reliability issues for interconnects as they are scaled to 0.18 um and below. Several of the low-k dielectrics, integrated into a dual-damascene Cu process flow, are quite leaky and have difficulty in meeting a leakage spec of 1E-8 A/cm/sup 2/ at 25/spl deg/C. Time-dependent dielectric breakdown (TDDB) for some of the low-k candidate films is also an issue because of generally low breakdown strengths
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ae7a6a18f1e3bdefca02d52f1e3ba92 https://doi.org/10.1109/relphy.2000.843938 Zobrazit plný text záznamu