| Autor: |
John C. Roberts, J. Ramdani, Salah M. Bedair, H. Liu, Karim S. Boutros |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
Selective area epitaxial growth of gallium arsenide by laser assisted chemical vapor deposition (LCVD) offers a promising approach to in situ device fabrication and integration. By scanning a focussed Ar ion laser beam across a thermally biased substrate in the presence of arsine and an organometallic source, GaAs is selectively deposited only on areas of the substrate exposed to the laser beam at substrate temperatures in the range of 300 - 400 degree(s)C. Laser assisted chemical vapor deposition of undoped and n-type doped device quality GaAs has been demonstrated. The laser-grown undoped GaAs films are highly resistive and exhibit 77 degree(s)K PL spectra with FWHMs of < 10 meV. N-type GaAs, using silane as a dopant source, has been deposited having controllable carrier concentrations ranging from 1 (DOT) 1017 - 7 (DOT) 1018 cm-3 and room temperature mobilities between 600 - 5100 cm2/V(DOT)sec. GaAs MESFET structures have been selectively deposited using the LCVD growth technique. These devices have performance characteristics comparable to devices of similar dimensions grown by conventional techniques.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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