Furnace grown gate oxynitride using nitric oxide (NO)
| Autor: | Rama I. Hegde, B. Maiti, Kimberly G. Reid, Philip J. Tobin, Yoshitaka Okada, Sergio A. Ajuria |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Silicon business.industry Annealing (metallurgy) Electrical engineering chemistry.chemical_element Binary compound Nitrogen Electronic Optical and Magnetic Materials Nitric oxide chemistry.chemical_compound chemistry MOSFET Optoelectronics Field-effect transistor Nitrogen oxide Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 41:1608-1613 |
| ISSN: | 0018-9383 |
| Popis: | Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO/sub 2/ interface. Much lower thermal budget is required for an NO process than for an N/sub 2/O process to produce an oxynitride with useful properties. Submicron MOSFET's with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N/sub 2/O oxynitride. > |
| Databáze: | OpenAIRE |
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