| Popis: |
Resistive switching characteristics of sol-gel processed TiO2 thin films are investigated. The influence of polarity of the forming voltage on switching type in Pt/TiO2/Pt stack is investigated. Reliability and stability of the device is significantly improved by choosing a proper voltage polarity on electroforming. The device shows excellent switching properties such as high on/off ratio (> 20), good cycling endurance and long retention (> 104 s) and possible to use multi bit storage has been demonstrated. The switching mechanism is explained by a physical model based on localized generation/recovery of oxygen vacancy defects. |
