Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (001) substrates

Autor:	F. Fournel, V. Poydenot, R. Dujardin, A. Barski, Jean-Luc Rouvière
Rok vydání:	2005
Předmět:	Nanostructure Silicon chemistry.chemical_element Germanium Condensed Matter Physics Inorganic Chemistry Condensed Matter::Materials Science Crystallography chemistry Transmission electron microscopy Quantum dot Materials Chemistry Twist Dislocation Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 278:83-87
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2004.12.167
Popis:	Highly ordered germanium nanostructures are grown by molecular beam epitaxy (MBE) on molecularly bonded silicon (0 0 1) substrates. For high twist-angle-bonded substrates (twist angle as high as 20°), a one-dimensional organization of growth is induced by an interfacial network of mixed tilt dislocations. Depending on growth conditions, we were able to achieve an organized growth of germanium dots, hut islands and wires.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0aca156c28d9c001b3fe4000b210d27a https://doi.org/10.1016/j.jcrysgro.2004.12.167 Zobrazit plný text záznamu Full Text from ScienceDirect