Implications of Dopant-Fluctuation-Induced $V_{\rm t}$ Variations on the Radiation Hardness of Deep Submicrometer CMOS SRAMs
| Autor: | Bharat L. Bhuva, Lloyd W. Massengill, A.L. Sternberg, P.R. Fleming, A. Balasubramanian |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Critical charge
Materials science Dopant Monte Carlo method Electronic Optical and Magnetic Materials Computational physics CMOS Hardening (metallurgy) Electronic engineering Cmos logic circuits Static random-access memory Electrical and Electronic Engineering Safety Risk Reliability and Quality Radiation hardening |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 8:135-144 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2007.915011 |
| Popis: | Accurately analyzing the single-event (SE) vulnerability of static random-access memory (SRAM) cells leads to precisely calculated soft-error rates (SERs). Random dopant-fluctuation-induced Vt variations affect the SE vulnerability of these memory cells and increase the intercell spread in critical charge (Qcrit), which cause SE upsets. This might consequently lead to higher SERs than would be calculated, assuming a single critical charge. Monte Carlo simulations in the IBM 130- and 90-nm technologies quantify this spread in Qcrit and in SRAM soft-error cross sections with increasing variance. For a radiation-tolerant design, a statistical-design methodology must be used to validate existing hardening schemes and to obtain the expected tolerance levels. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|