Formation of Nanoscale Cracks and Fractoluminescence upon Destruction of Carbon Ceramics
| Autor: | V. I. Vettegren, Igor Shcherbakov, A. G. Kadomtsev, R. I. Mamalimov, V. B. Kulik |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon chemistry.chemical_element Diamond engineering.material Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound symbols.namesake chemistry visual_art 0103 physical sciences visual_art.visual_art_medium engineering Silicon carbide symbols Ceramic Surface layer Composite material 010306 general physics Porosity Raman spectroscopy Carbon |
| Zdroj: | Physics of the Solid State. 62:2089-2093 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s1063783420110396 |
| Popis: | We obtained a Raman spectrum for a surface layer of porous carbon ceramic (porosity ≈5%) of ≈80 nm thick. The analysis of the spectrum showed that the ceramics contain crystals of silicon carbide 6H‑SiC and silicon. The destruction of ceramics by diamond microcrystals resulted in fractoluminescence (FL). Its spectrum contained two bands at 1.6 and 1.9 eV. The first is emerged at the destruction of silicon crystals, and the second is emerged at 6H-SiC crystals. We obtained the time dependence of the intensity of the fractoluminescence signals with a time resolution of 2 ns. Three types of signals were observed: one is formed when the 6H-SiC crystals are destroyed; the second is formed when silicon crystals are destroyed; the third is formed when these crystals are simultaneously destroyed. The appearance of signals is associated with the formation of cracks arising from the breakthrough of barriers formed at the intersection of slip planes of dislocations in silicon carbide and silicon crystals. The size of cracks in 6H-SiC has been estimated: the smallest is 5.5 nm, and the largest is ≈18 nm. |
| Databáze: | OpenAIRE |
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