A 256 × 256, 50-μm Pixel Pitch OPD Image Sensor Based on an IZO TFT Backplane

Autor:	Miao Xu, Ruan Chongpeng, Zhou Lei, Jianhua Zou, Wei-Jing Wu, Yan-Gang Xu, Lei Wang, Junbiao Peng
Rok vydání:	2021
Předmět:	Materials science business.industry Transistor Dot pitch law.invention Photodiode Sensor array Backplane law Thin-film transistor Optoelectronics Electrical and Electronic Engineering Image sensor business Instrumentation Dark current
Zdroj:	IEEE Sensors Journal. 21:20824-20832
ISSN:	2379-9153 1530-437X
DOI:	10.1109/jsen.2021.3095714
Popis:	This paper proposes an organic photodiode (OPD) image sensor based on indium zinc oxide (IZO) thin-film transistors (TFTs). The sensor array has a $256\times256$ pixel format with a $50~\mu \text{m}$ pixel size. The continuous OPD fabricated by the solution process is stacked vertically on the top of the IZO TFT backplane. A measurement system is built based on the readout IC driven by the field programmable gate array (FPGA). It is shown that the optical image can be successfully detected by the sensor array with good clarity and high quality. With a leakage current of the IZO TFT as low as $5\times 10^{\vphantom {D^{l}}-14}$ A and a dark current of OPD as low as $10^{-13}$ A, the total electronic noise is less than 683 e−.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ab813dfcf5eca86ac0dda53c30f8fca https://doi.org/10.1109/jsen.2021.3095714 Zobrazit plný text záznamu