A unified wide temperature range model for the energy gap, the effective carrier mass and intrinsic concentration in silicon

Autor:	Wim Schoenmaker, R. Vankemmel, K. De Meyer
Rok vydání:	1993
Předmět:	Silicon Chemistry Band gap Computation chemistry.chemical_element Electron Atmospheric temperature range Condensed Matter Physics Electronic Optical and Magnetic Materials Computational physics Materials Chemistry Electronic engineering Electrical and Electronic Engineering Device simulation
Zdroj:	Solid-State Electronics. 36:1379-1384
ISSN:	0038-1101
Popis:	In this paper a new model for the intrinsic concentration in silicon is derived. It uses new wide temperature range models for the effective electron and hole masses which are based on fundamental computations found in literature. Furthermore the available models for the energy gap are reviewed. The intrinsic concentration is then computed out of these models and compared with measured data. It is shown that the model is in very close agreement with these data. The three models provide a unified consistent way for computing these physical values in device simulation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ab70406d7ec40f3f48ff2731334c0b0 https://doi.org/10.1016/0038-1101(93)90046-s Zobrazit plný text záznamu