Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields

Autor: Isao Sakaguchi, T. Suzuki, Youichi Mizuno, Kentaro Morito, Naoki Ohashi, Hajime Haneda, Kenji Matsumoto
Rok vydání: 2009
Předmět:
Zdroj: Key Engineering Materials. :281-284
ISSN: 1662-9795
DOI: 10.4028/www.scientific.net/kem.421-422.281
Popis: The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.
Databáze: OpenAIRE