Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2
| Autor: | C.-Y. Liao, Shu-Tong Chang, Shih-Hung Chiang, Hong Liang, Jen-Hao Liu, Kuan-Ting Chen, Fu-Jhu Hsieh, Min-Hung Lee, Kai-Shin Li, K.-Y. Hsiang, Shao-Hua Chang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Computer simulation Condensed matter physics Gaussian Transistor 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Polarization (waves) 01 natural sciences Ferroelectricity Electronic Optical and Magnetic Materials law.invention symbols.namesake Planar law 0103 physical sciences Materials Chemistry symbols Electrical and Electronic Engineering 0210 nano-technology Scaling Negative impedance converter |
| Zdroj: | Semiconductor Science and Technology. 35:125011 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/abba41 |
| Popis: | Device dimension scaling down to be comparable to the domain size of polycrystalline ferroelectric HfZrO2 (HZO) is evaluated for subthreshold swing (SS) and drain-induced barrier lowering (DIBL) by numerical simulation. The proposed multi-domain modeling involves polarization random location in HZO and probability with Gaussian distribution, as well as being integrated with the Landau–Khalatnikov equation. A small device with a few domains exhibits steep SS compared with large dimension with many domains. The N-DIBL (negative-DIBL) is also estimated by using this model, and the negative capacitance effect retards the short-channel effects significantly. The trend of the experimental data and simulation results of fin field-effect transistors and planar field-effect transistors is consistent with nano-scale and micro-scale devices, respectively. |
| Databáze: | OpenAIRE |
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