Technology and physics of polysilicon emitters
| Autor: | H. Schaber, T.F. Meister |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Physics
Silicon business.industry Heterostructure-emitter bipolar transistor Polysilicon depletion effect Bipolar junction transistor Electrical engineering chemistry.chemical_element Transit time Engineering physics Computer Science::Other chemistry ComputerApplications_GENERAL Hardware_INTEGRATEDCIRCUITS Physics::Accelerator Physics business Common emitter |
| Zdroj: | Proceedings of the Bipolar Circuits and Technology Meeting. |
| DOI: | 10.1109/bipol.1989.69463 |
| Popis: | Basic models proposed to explain the polysilicon emitter effect are reviewed, and the present status of polysilicon emitter modeling is summarized. The present state of the technology is described, and its advantages are discussed. Optimization of forward transit time and speed limitations of polysilicon emitter devices are examined. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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