Determining the generation lifetime in a MOS capacitor using linear sweep techniques
| Autor: | Ladislav Harmatha, Milan Ťapajna |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Profiling (computer programming)
Semiconductor characterization techniques Mos capacitor Engineering business.industry Electrical engineering Condensed Matter Physics Durability Electronic Optical and Magnetic Materials Reliability (semiconductor) Hardware_GENERAL Materials Chemistry Electronic engineering Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 48:2339-2342 |
| ISSN: | 0038-1101 |
| Popis: | A comparison between two linear sweep techniques for generation lifetime profiling is reviewed here. These semiconductor characterization techniques find widespread application because of their availability in commercial equipment and ability to reduce the measurement time. It is shown experimentally that parameters such as generation lifetime and surface generation velocity determined by linear sweep techniques agree well with those obtained from pulsed MOS capacitor measurement. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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