Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers
| Autor: | Chien-Chia Chiu, Jinn-Kong Sheu, Kai-Bin Lin, Yan-Kuin Su, Gou-Chung Chi, Shoou-Jinn Chang, Chia-Cheng Liu |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Laser diode business.industry Heterojunction Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention Optics Ion implantation law Materials Chemistry Optoelectronics Equivalent circuit Electrical and Electronic Engineering business Current density Quantum well Diode |
| Zdroj: | Solid-State Electronics. 42:1867-1869 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(98)00148-8 |
| Popis: | In this study, H + ion implantation was used to form high resistive regions in an AlGaInP/GaInP multi-quantum well (MQW) gain guided laser diode. The electrical derivative was used to characterize the properties of the fabricated laser diodes. The equivalent circuits were proposed to model the diodes for various structures. It was found that diodes fabricated with H + ion implantation, have lower threshold current density and better carrier confinement characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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