| Autor: |
Tonio Buonassisi, Mallory A. Jensen, David P. Fenning, T. S. Ravi, Douglas M. Powell, Ruiying Hao, Jasmin Hofstetter |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC). |
| DOI: |
10.1109/pvsc.2014.6924869 |
| Popis: |
Thin kerfless crystalline silicon wafers have long been pursued to reduce the manufacturing cost of crystalline silicon photovoltaics. However, although the potential for wafer cost reductions provided by these technologies is significant, the manufacturing cost of modules is most sensitive to power conversion efficiency. Therefore, a kerfless silicon wafer must be of sufficient electrical quality to support high device efficiencies for maximum economic impact. We present both p-type and n-type epitaxially grown kerfless material with high electrical quality. Carrier lifetimes > 300 µs effective and > 800 µs estimated bulk at a 1015 cm−3 injection level after gettering are reported for p-type material. This material has a single-crystal structure and does not appear to be limited by interstitial iron. With n-type material, effective lifetimes > 850 µs at a 1015 cm−3 injection level after gettering are presented. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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