Application of X-ray scattering methods to the analysis of Si-based heterostructures
| Autor: | J.F. Woitok |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Diffraction
Materials science business.industry Scattering Astrophysics::High Energy Astrophysical Phenomena Metals and Alloys X-ray Heterojunction Surfaces and Interfaces Surface finish Reflectivity Surfaces Coatings and Films Electronic Optical and Magnetic Materials Computational physics X-ray reflectivity Optics Content (measure theory) Materials Chemistry business |
| Zdroj: | Thin Solid Films. 450:138-142 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2003.10.058 |
| Popis: | High-resolution X-ray diffraction, X-ray reflectivity and X-ray diffuse scattering have been combined to characterize Si–Ge heterostructures. The discussion is focused on the complementary information content of the different X-ray scattering techniques in order to obtain a sample model that describes sufficiently all measured data sets. Quantitative information about composition, thickness, interface roughness and lateral correlation length was extracted from the measured data by fitting simulated curves. Unintentional compositional gradients could be detected and quantified. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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