Characteristics of ZnO quantum dots as charge-storage layer in MONOS-Type Nonvolatile Memory
| Autor: | Yongjun Zhang, Yu-Yong Su, Lilong Liu, Jiqu Xu |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) Nanoparticle 02 engineering and technology Integrated circuit engineering.material 021001 nanoscience & nanotechnology 01 natural sciences law.invention Non-volatile memory Polycrystalline silicon Sputtering Quantum dot law Logic gate 0103 physical sciences engineering Optoelectronics 0210 nano-technology business |
| Zdroj: | 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC). |
| DOI: | 10.1109/edssc.2017.8126513 |
| Popis: | MONOS-Type nonvolatile memory devices with quantum dots (QDs) as charge-storage layer (CSL) have been investigated for a long time to replace conventional polycrystalline silicon floating gate memory due to the advantages of smaller operating voltage, faster programming/erasing speed, smaller size, better endurance, and increased bit storage density. As the key part, different types of semiconductor quantum dots have been extensively studied, such as GeError! Reference source not found., SiCError! Reference source not found., SiGeError! Reference source not found., InP and ZnO. In this work, the effect of different sputtering thickness and post-deposition annealing (PDA) temperature on the forming size of ZnO QDs has been investigated. Compared with some chemical method [4,5], this preparation method of ZnO QDs would be simpler and compatible with traditional integrated circuit technology. |
| Databáze: | OpenAIRE |
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