Characterization of Local Strain Structures in Heteroepitaxial Ge1−x Sn x /Ge Microstructures by Using Microdiffraction Method

Autor:	Noriyuki Taoka, Masashi Kurosawa, Yasuhiko Imai, Yoshihiko Moriyama, Osamu Nakatsuka, Shinichi Ike, Shigeaki Zaima, Shigeru Kimura, Tsutomu Tezuka
Rok vydání:	2013
Předmět:	Materials science Strain (chemistry) Condensed matter physics Relaxation (NMR) Perpendicular Microstructure Layer (electronics) Finite element method Molecular beam epitaxy Characterization (materials science)
Zdroj:	ECS Transactions. 58:185-192
ISSN:	1938-6737 1938-5862
DOI:	10.1149/05809.0185ecst
Popis:	In this study, we have examined the local growth of Ge1 − x Sn x heteroepitaxial layers on micrometer-scale-patterned Ge substrates with molecular beam epitaxy method. We have investigated the strain relaxation behavior and microscopic local strain structure in both Ge and Ge1 − x Sn x by using x-ray microdiffraction and finite element method calculation. We found that the anisotropic strain relaxation of embedded Ge1 − x Sn x layers preferentially occurs along the direction which is perpendicular to the stripe line. Microdiffraction method revealed that the elastic strain relaxation of the embedded Ge1 − x Sn x layer occurs near the edge region. We demonstrated that the uniaxial compressive strain of 0.2% is locally induced in Ge with Ge1 − x Sn x stressors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0a6afdc0ccbcde94d1d8270ab66406b0 https://doi.org/10.1149/05809.0185ecst Zobrazit plný text záznamu