Evolution of Wafer Shape and Localized Stress of Silicon Surrounded by Through Silicon Via Patterns along Various Process Integration Steps

Autor:	H. W. Yoo, S. H. Jie, S. H. Son, Il Keoun Han, J. T. Kim, ChangHwan Lee, W. S. Yoo
Rok vydání:	2011
Předmět:	Stress (mechanics) Materials science Silicon chemistry Through-silicon via business.industry Process integration chemistry.chemical_element Optoelectronics Nanotechnology Wafer business
Zdroj:	Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2011.p-2-6
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0a59375ea11d2e98b654274c4abd298d https://doi.org/10.7567/ssdm.2011.p-2-6 Zobrazit plný text záznamu