Structural and Electronic Properties of (CdTe)1−x(In2Te3)x Films Grown by Close-spaced vapor Transport Combined with Free Evaporation
| Autor: | M. Melé-Lirandez, R. Castro-Rodríguez, S. Jimé-Sandovalnez, Y. P. Mascarenhas, M. Zapata-Torres, A. Zapata-Navarro, J. L. Peña, J. Luyo-Alvarado, M. A. Santana-Aranda |
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| Rok vydání: | 2000 |
| Předmět: |
Diffraction
Materials science Band gap Mechanical Engineering Evaporation Analytical chemistry Substrate (electronics) Condensed Matter Physics Cadmium telluride photovoltaics symbols.namesake Mechanics of Materials symbols General Materials Science Direct and indirect band gaps Thin film Raman spectroscopy |
| Zdroj: | Journal of Materials Research. 15:1811-1815 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.2000.0261 |
| Popis: | The structural and electronic properties of (CdTe)1−x(In2Te3)x thin films as a function of substrate temperature were studied using x-ray diffraction, energy dispersive x-ray analysis, and Raman, transmission, and modulated transmission spectroscopies. The films were grown by the close-spaced vapor transport technique combined with free evaporation; CdTe and In2Te3 were used as sources. From x-ray diffraction the presence of mixed phases and differences in composition were detected, and good correlation with Raman spectroscopy was found. Transmission spectroscopy suggested the possibility of a modulation of the band gap of the alloy from a value as low as 0.5 eV up to 1.5 eV. Single-phase films presented a direct band gap of around 1.15 eV, as obtained from modulated transmission measurements. |
| Databáze: | OpenAIRE |
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