Low-Temperature Deposition of Ga-Doped ZnO Films for Transparent Electrodes by Pulsed DC Magnetron Sputtering

Autor:	Kyung-Jun Ahn, Dongkeun Cheon, Woong Lee
Rok vydání:	2017
Předmět:	Grain growth Materials science Low temperature deposition Electrode Doping Pulsed DC Nucleation General Materials Science Nanotechnology Sputter deposition Thin film Composite material
Zdroj:	Korean Journal of Materials Research. 27:69-75
ISSN:	2287-7258 1225-0562
Popis:	To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to 250 oC, respectively. Electrical properties of the GZO films initially improved with increase of temperature to 150 oC, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0a4fe2cb438a6cd28c032de9c3fc2e6a https://doi.org/10.3740/mrsk.2017.27.2.69 Zobrazit plný text záznamu