MOVPE Growth of AlInP–InGaP Distributed Bragg Reflectors
| Autor: | Rekha Reddy, Kamran Forghani, David Rowell, Rao Tatavarti |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Band gap 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials Gallium arsenide law.invention chemistry.chemical_compound chemistry law 0103 physical sciences Solar cell Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering 0210 nano-technology business Current density Voltage |
| Zdroj: | IEEE Journal of Photovoltaics. 10:754-757 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2020.2971145 |
| Popis: | This article discusses metal–organic vapor phase epitaxy growth of all-phosphide (AlInP–InGaP) distributed Bragg reflectors (DBRs) and their applications for thin flexible multijunction solar cell devices. DBRs with a peak reflectance of 884 nm—close to the GaAs bandgap energy—were grown. This all-phosphide DBR was monolithically integrated with a dual-junction (DJ) InGaP/GaAs solar cell. The DJ cell with a DBR exhibited a 3% increase in short-circuit current density ( J sc), in comparison with the DJ without a DBR. Both open-circuit voltage ( V oc) and fill factor ( FF) values of the solar cell did not change with the DBR integration. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|