Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

Autor:	Naoya Komatsu, Ryotaro Kumashiro, Kenta Kotani, Nobuya Hiroshiba, Taishi Takenobu, Yoshihiro Iwasa, Iwao Kawayama, Yusuke Suto, Masayoshi Tonouchi, Katsumi Tanigaki
Rok vydání:	2006
Předmět:	Laser ablation Materials science Organic field-effect transistor business.industry Dielectric Epitaxy chemistry.chemical_compound chemistry Optoelectronics Thin film business Rubrene Single crystal High-κ dielectric
Zdroj:	MRS Proceedings. 965
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-0965-s08-04
Popis:	High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0a27016ba85a832b6e72c57e5ac76f11 https://doi.org/10.1557/proc-0965-s08-04 Zobrazit plný text záznamu Full text from SpringerLink