Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs

Autor:	Amela Softic, Yu (Anne) Zeng, Marvin H. White
Rok vydání:	2002
Předmět:	Materials science Subthreshold conduction MOSFET Materials Chemistry Electrical and Electronic Engineering Atomic physics Condensed Matter Physics Subthreshold slope Electronic Optical and Magnetic Materials
Zdroj:	Solid-State Electronics. 46:1579-1582
ISSN:	0038-1101
Popis:	In this paper the interface trap densities (Dit) of 4H and 6H-SiC MOSFETs in the subthreshold region have been studied. Interface trap densities in this region were extracted as a function of trap energy (ET) from the transfer characteristics. We show these interface trap densities increase exponentially approaching the onset of strong inversion for both polytypes, and Dit(ET) is higher in 4H than in 6H through the subthreshold region. These results are consistent with previous reports [1] , [2] , [3] , [4] , [5] , [6] .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0a1b7bb670bacf2188399615200154c2 https://doi.org/10.1016/s0038-1101(02)00108-9 Zobrazit plný text záznamu Full Text from ScienceDirect