Stochastic mechanism for charged-particle deflection by means of a bent crystal in the TeV energy range

Autor:	I. V. Kirillin, N. F. Shul’ga, V. I. Truten
Rok vydání:	2013
Předmět:	Physics Total internal reflection Optics Deflection (physics) Computer simulation business.industry Bent molecular geometry Thin film business Molecular physics Charged particle Surfaces Coatings and Films
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:398-400
ISSN:	1819-7094 1027-4510
DOI:	10.1134/s1027451013020468
Popis:	Based on numerical simulation of the motion of charged particles in a crystal, the possibility of deflecting charged particles by means of a bent crystal in the TeV energy range is considered using the stochastic deflection mechanism. The obtained results show that both positively and negatively charged particles can be deflected at an angle noticeably exceeding the critical angle of axial channeling, if the particles are incident on the crystal at a small angle to one of the principal crystallographic axes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0a001b392932bc826ad80ada6b2d9e3e https://doi.org/10.1134/s1027451013020468 Zobrazit plný text záznamu Full text from SpringerLink