Rapid thermal processing of hafnium dioxide thin films by remote plasma atomic layer deposition as high-k dielectrics
| Autor: | Fei-Bing Xiong, Yun-Shao Cho, Chia-Hsun Hsu, Shui-Yang Lien, Wen-Zhang Zhu, Sam Zhang, Xiao-Ying Zhang |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Metals and Alloys Analytical chemistry chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Hafnium chemistry.chemical_compound Atomic layer deposition chemistry Rapid thermal processing 0103 physical sciences Materials Chemistry Remote plasma Thin film 0210 nano-technology Hafnium dioxide High-κ dielectric |
| Zdroj: | Thin Solid Films. 660:797-801 |
| ISSN: | 0040-6090 |
| Popis: | Hafnium oxide (HfO2) thin films have received significant attention due to its excellent properties, such as large band gap, good thermodynamic stability, high density and high dielectric constant. The post-annealing temperature is also essential to their properties and application possibilities. In this work, HfO2 thin films were prepared on p-type silicon (100) substrates by remote plasma atomic layer deposition using tetrakis (ethylmethylamino) hafnium and remote oxygen plasma at 250 °C. The effect of rapid thermal annealing on the properties of the thin films was investigated using grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy and field-emission transmission electron microscope (FE-TEM). FE-TEM and GIXRD results show that the as-deposited films are mostly amorphous and the crystallization initiates at about 500 °C. They also unveil a positive correlation between interface properties of the HfO2 thin films and a dependence of the crystallinity on annealing temperature. |
| Databáze: | OpenAIRE |
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