An oxygen-compatible radiant substrate heater for thin film growth at substrate temperatures up to 1050 °C

Autor:	J. C. Clark, J. P. Maria, Darrell G. Schlom, K. J. Hubbard
Rok vydání:	1997
Předmět:	Materials science business.industry Heating element Oxide Substrate (electronics) Pulsed laser deposition chemistry.chemical_compound Vacuum deposition chemistry Oxidizing agent Optoelectronics lipids (amino acids peptides and proteins) Wafer Thin film business Instrumentation
Zdroj:	Review of Scientific Instruments. 68:2538-2541
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1148156
Popis:	The design and performance of a radiative substrate heater that operates under vacuum in a highly oxidizing environment is described. Using this heater, substrate temperatures exceeding 1050 °C are readily achieved. These are the highest temperatures reported for a pulsed laser deposition (PLD) heater that operates in an oxidizing ambient. This heater was designed for the growth of oxide thin films by PLD, but the design concept is suitable for other vacuum deposition methods requiring high substrate temperatures to be achieved in an oxidizing environment. In addition to the high substrate temperatures achievable, the design described enables easy switching between on-axis PLD and off-axis PLD (allowing both sides of the wafer to be coated in the same growth) and allows the target-to-substrate distance to be easily adjusted from outside the chamber.
Databáze:	OpenAIRE
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