Electron and phonon dynamics in zincblende gallium nitride
| Autor: | R. Raguotis, R. Brazis |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Physics
Condensed matter physics Phonon Relaxation (NMR) Gallium nitride Surface phonon Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Population inversion Condensed Matter::Materials Science chemistry.chemical_compound chemistry Condensed Matter::Superconductivity Electric field Condensed Matter::Strongly Correlated Electrons Stimulated emission |
| Zdroj: | physica status solidi c. 6:2674-2677 |
| ISSN: | 1610-1642 1862-6351 |
| DOI: | 10.1002/pssc.200982581 |
| Popis: | This report presents new Monte Carlo simulation results revealing the ballistic stage of growth of the phonon number, electron velocity and energy upon the switching-on electric field, the shape of electron and phonon stationary distributions in high electric fields, as well as electron cooling and phonon number relaxation rates after switching-off the field in zincblende gallium nitride crystals. LO phonon band population inversion is feasible here up to the room temperature relative to the TO phonons, and below T < 80 K – relative to the LA-phonon band provided that the phonon lifetimes satisfy the conditions of ≥ 2 ps (LO) and ≥ 2 ns (LA). Phonon decay scenarios with the stimulated emission of infrared-range photons are discussed including phonon difference transitions. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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