Influence of the Groove Depth on the Electrical Characteristics of the Vertical GaN Trench MOSFETs
| Autor: | Jinwei Zhang, Liang He, Qi Zhang, Zhenxing Liu, Zhisheng Wu, Liuan Li, Zhiyuan He, Yunliang Rao, Yapeng Wang, Taotao Que, Yang Liu, Chenglang Li, Qiu-Ling Qiu, Qianshu Wu |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Wide-bandgap semiconductor 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electric field 0103 physical sciences MOSFET Trench Breakdown voltage Optoelectronics 0210 nano-technology business Groove (engineering) |
| Zdroj: | 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS). |
| DOI: | 10.1109/sslchinaifws51786.2020.9308870 |
| Popis: | In this work, the groove depth of the vertical GaN trench MOSFETs have been investigated by TCAD simulation. The groove depth is found to have a crucial influence on the specific on-resistance and breakdown voltage. A deep enough groove is required to annihilate the build-in barrier between the p-body and the n-drift region close to the sidewall of the groove, in order to reduce the specific on-resistance. On the other hand, an increased groove depth will also cause electrical field peak and hence degrade the breakdown voltage. Therefore, there is a trade-off between the specific on-resistance and breakdown voltage, and optimization is required. This study has provided a quantitative analysis on the optimization scheme. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|