Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si1−yCy alloy layers
| Autor: | David Onsongo, Zhonghai Shi, E. Quinones, Sanjay K. Banerjee |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Fabrication business.industry Alloy Heterojunction engineering.material Condensed Matter Physics Electronic Optical and Magnetic Materials MOSFET Ultimate tensile strength Materials Chemistry engineering Electronic engineering Optoelectronics Degradation (geology) Field-effect transistor Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | Solid-State Electronics. 48:379-387 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2003.09.003 |
| Popis: | Si1−yCy alloy layers deposited on (1 0 0) Si form a tensile-strained layer, similar to strained-Si on a relaxed SiGe buffer. We present the results of fabrication of heterojunction metal oxide semiconductor field effect transistor (MOSFET) devices using Si1−yCy alloy layers, deposited by UHVCVD. By developing a low temperature process flow ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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