| Autor: |
D. Beke, A. Pongrácz, G. Battistig, K. Josepovits, B. Pécz, Gabriel Ferro, Paul Siffert |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| DOI: |
10.1063/1.3518302 |
| Popis: |
Epitaxial formation of SiC nanocrystals has been investigated on single crystal silicon surfaces. A simple and cheap method using reactive annealing in CO has been developed and patented by our group (BME AFT and MTA MFA). By this technique epitaxial 3C‐SiC nanocrystals can be grown at the Si side of a SiO2/Si interface without void formation at the SiC/Si interface. CO diffusion and SiC nanocrystal formation on different silicon based systems (SiO2/Si, Si3N4/3Si and SiO2/LPCVD poly‐Si) after CO treatment at 105 Pa at elevated temperatures (T>1000° C) will be presented. By optimizing the annealing time a thin continuous nanocrystalline SiC layer has been formed. Applying a patterned Si3N4 capping layer as a barrier layer against CO diffusion, SiC nanocrystal formation at the Si3N4/Si interface is inhibited. We will present the selective growth of SiC nanocrystals using the before mentioned technique. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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