Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm
| Autor: | Helmut Roehle, Norman Born, Bernd Sartorius, Martin Schell, S. Ullrich, Dennis Stanze, Björn Globisch, Rafal Wilk, Steffen Schumann, Roman J. B. Dietz, Martin Koch |
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| Rok vydání: | 2013 |
| Předmět: |
Excitation wavelength
Radiation Materials science business.industry Terahertz radiation Photoconductivity Doping Condensed Matter Physics Spectral line chemistry.chemical_compound chemistry Excited state Optoelectronics Ingaas inalas Electrical and Electronic Engineering business Instrumentation Indium gallium arsenide |
| Zdroj: | Journal of Infrared, Millimeter, and Terahertz Waves. 34:231-237 |
| ISSN: | 1866-6906 1866-6892 |
| DOI: | 10.1007/s10762-013-9968-4 |
| Popis: | We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material’s relaxation time constants. |
| Databáze: | OpenAIRE |
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