Photoluminescence and lasing characteristics of single nonpolar GaN microwires
| Autor: | Xuelin Wang, Shan-Shan Yan, Shichen Su, C. C. Ling, A. Q. Chen, Huilian Zhu, Yan Y. Wu |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Photoluminescence business.industry General Chemical Engineering Exciton Finite-difference time-domain method 02 engineering and technology General Chemistry Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Catalysis Optoelectronics Metalorganic vapour phase epitaxy 0210 nano-technology business Lasing threshold Line (formation) |
| Zdroj: | RSC Advances. 7:21541-21546 |
| ISSN: | 2046-2069 |
| DOI: | 10.1039/c7ra01921a |
| Popis: | Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst. The temperature-dependent photoluminescence (PL) properties of a single GaN MW were discussed comprehensively. Below the temperature of 90 K, the neutral donor-bound exciton (D0X) line dominates in the spectrum, while the free–exciton transition dominates at temperatures above 90 K. The optical properties of GaN MWs exhibit a multiple-mode-stimulated-amplified emission with a peak around 375 nm and a corresponding lasing threshold of about 120 kW cm−2. In addition, the lasing characteristics of GaN MWs were explored by the finite-difference time-domain (FDTD) method. |
| Databáze: | OpenAIRE |
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